NoLvW said:
I must admit that I did not check the whole calculation (extensive and hard to read).falcon555 said:
Bipolar base emitter voltage refers to the voltage difference between the base and emitter terminals in a bipolar junction transistor. It is a critical parameter that determines the transistor's operation and performance.
The base emitter voltage is important because it controls the flow of current through the transistor. It also affects the amplification and switching characteristics of the transistor.
The base emitter voltage can be calculated by subtracting the emitter voltage from the base voltage. It can also be calculated using the current gain and the collector current of the transistor.
The typical range of base emitter voltage for a bipolar junction transistor is between 0.5V to 0.7V for silicon transistors and 0.2V to 0.3V for germanium transistors.
The base emitter voltage affects the operating point of a transistor by changing the amount of current flowing through the base-emitter junction. This, in turn, affects the collector current and voltage, and thus the overall performance of the transistor.