Why Does Current Flow from Emitter to Collector in an NPN Transistor?

In summary: Base current is not kept constant for output characteristics; in fact, it varies depending on the transistor's saturation condition. However, if you vary the collector voltage, then the base current will stay constant. In summary, when a transistor is in saturation, the base current flow varies depending on the collector voltage, but base current is still kept constant when the transistor is in this saturation condition.
  • #1
staraet
13
0
current direction?

in transistor (npn) saturation, we know (in CE) Vbe=~0.75 V. and Vce is around 0.2 V.
In such a case according to characteristic plots, we know Ic flows to emitter (via base)

But current always flows from higher to lower potentials.
Why in this case it is not?

please solve this...
 
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  • #2


You would expect the base current to flow from base to collector wouldn't you?

However this is still a diode and it needs 0.6 volts to make it conduct. So the base has to be 0.6 volts more positive than the collector before it would make the B - C diode conduct.

This would only happen if the collector was at zero volts which will not happen if the transistor is powered.
 
  • #3


vk6kro said:
You would expect the base current to flow from base to collector wouldn't you?

However this is still a diode and it needs 0.6 volts to make it conduct. So the base has to be 0.6 volts more positive than the collector before it would make the B - C diode conduct.

This would only happen if the collector was at zero volts which will not happen if the transistor is powered.

if it is like a diode, then it is operating in reverse bias, which allows only small currents (usually in micros) .
Another factor is such that , how can current pass comfortably in reverse bias (C-B), where it could not in forward potiential barrier (B-C)?

Thank you
 
  • #4


staraet said:
if it is like a diode, then it is operating in reverse bias, which allows only small currents (usually in micros) .
Another factor is such that , how can current pass comfortably in reverse bias (C-B), where it could not in forward potiential barrier (B-C)?

Thank you

hey for the CE junction it is reverse biased which means holes in p type can move to n type and vice versa .But the minority charge carriers in p type namely electrons can move to
n type in reverse bias
since electrons which have come from emitter and are now in the base they are attraced due the positive voltage applied at the n type so they flow easily
(Hey don't confuse with minority in p type and electrons from emitter both are independent but both can flow easily to the n (collector) since + field is applied at the collector.
 
  • #5


If you test any NPN transistor with a multimeter, you will see that it tests like two diodes with their anodes joined at the base.

So, if the collector voltage is less than the base voltage, the junction is forward biassed, but not enough for it to conduct unless the collector is actually at zero volts.
 
  • #6


sudar_dhoni said:
hey for the CE junction it is reverse biased which means holes in p type can move to n type and vice versa .But the minority charge carriers in p type namely electrons can move to
n type in reverse bias
since electrons which have come from emitter and are now in the base they are attraced due the positive voltage applied at the n type so they flow easily
(Hey don't confuse with minority in p type and electrons from emitter both are independent but both can flow easily to the n (collector) since + field is applied at the collector.

""""since electrons which have come from emitter and are now in the base they are attraced due the positive voltage applied at the n type so they flow easily """"

as you said above, due to 0.2 V they get attracted easily;
but a much higher 0.65 V is pulling them to base region...
 
  • #7


vk6kro said:
If you test any NPN transistor with a multimeter, you will see that it tests like two diodes with their anodes joined at the base.

So, if the collector voltage is less than the base voltage, the junction is forward biassed, but not enough for it to conduct unless the collector is actually at zero volts.

i agree with you that it can't be forward...
what about when transistor is in saturation? where Vbe is around 0.8 V...


also why will electrons (presently in p material) go to a attracting 0.2 V leaving 0.65-0.75 attraction towards base?

thank you
 
  • #8


what about when transistor is in saturation? where Vbe is around 0.8 V...

If current does start to flow into the collector from the base, then this will drop the normal base current so the collector voltage will not drop any further.
 
  • #9


vk6kro said:
what about when transistor is in saturation? where Vbe is around 0.8 V...

If current does start to flow into the collector from the base, then this will drop the normal base current so the collector voltage will not drop any further.

mr vk6kro
leave alone our battle with potentiometer if u think about what i am asking u can answer it
u can't understand what I'm asking
ok let's go further
could u explain how base current can be kept constant for output characteristics
there u vary Vce.but if u vary Vce base current should decrease as the +voltage of collector has increased as a result it will attract more electrons towards collector as a result base current should decrease but its said that base current is constant how is that

p.s-how to become a science advisor like u i.e how to get that tag that u have it in ur name
 
  • #10


ok let's have another approach...

suppose all values Vbe, Vce, Ib, Ic, Ie... are Constant...i,e.now we are at anyone single point in characteristic curves.

now if an electron, starting from earth(emitter ground) , travels all it's way to Vce;

can anyone say how the potiential changes for that electron, to all its journey to Vce?
initial potiential of Earth is obviously zero.

lets talk as if a pure science; in terms of voltages, attractions,collisions(if) etc...
...as if someone asked you to plot the 'potiential Difference' graph.
value of PD on Y-axis and distance from emitter Earth to Vce on X-axis.

you can also tell in terms of force(NET)-distance if you are comfortable..

remember that Kinetic energy of electron is not considered when we talk on electron movements. it is considered constant.
also we know force inside any matertial (irrespective of concentrations of any charges inside) is zero. (vectors cancel each other)

only at junctions(or ends) that any electrons get into troubles.
 
  • #11


staraet said:
ok let's have another approach...

suppose all values Vbe, Vce, Ib, Ic, Ie... are Constant...i,e.now we are at anyone single point in characteristic curves.

now if an electron, starting from earth(emitter ground) , travels all it's way to Vce;

can anyone say how the potiential changes for that electron, to all its journey to Vce?
initial potiential of Earth is obviously zero.

lets talk as if a pure science; in terms of voltages, attractions,collisions(if) etc...
...as if someone asked you to plot the 'potiential Difference' graph.
value of PD on Y-axis and distance from emitter Earth to Vce on X-axis.

you can also tell in terms of force(NET)-distance if you are comfortable..

remember that Kinetic energy of electron is not considered when we talk on electron movements. it is considered constant.
also we know force inside any matertial (irrespective of concentrations of any charges inside) is zero. (vectors cancel each other)

only at junctions(or ends) that any electrons get into troubles.

what i think is that since Vce is higher tha Vbe
the electric field is larger
hence according to work energy theorm change in K.E = work
i.e the field of Vce has increased its energy
since voltage is nothing but energy the voltage of the electron has increased
 
  • #12


sudar_dhoni said:
what i think is that since Vce is higher tha Vbe
the electric field is larger
hence according to work energy theorm change in K.E = work
i.e the field of Vce has increased its energy
since voltage is nothing but energy the voltage of the electron has increased

"""since Vce is higher tha Vbe """

not always is Vce is higher than Vbe...

i already mentioned in starting that Vbe=0.7-0.8 in saturation;Vce=0.2-0.25;
 

Related to Why Does Current Flow from Emitter to Collector in an NPN Transistor?

1. Why does current flow from emitter to collector in an NPN transistor?

The flow of current in an NPN transistor is due to the movement of electrons from the negatively charged emitter region to the positively charged collector region. This creates a low resistance path for current to flow through the transistor.

2. How does the construction of an NPN transistor allow current to flow from emitter to collector?

The construction of an NPN transistor includes three layers of semiconductor material: a thin layer of P-type material sandwiched between two layers of N-type material. The negatively charged electrons from the N-type material are able to easily cross the P-type layer and flow from the emitter to the collector, creating a current flow.

3. What role do the base and emitter regions play in the current flow of an NPN transistor?

The base region acts as a control for the current flow in an NPN transistor. By applying a small current or voltage to the base, the flow of electrons from the emitter to the collector can be regulated. The emitter region, as the source of electrons, allows for a high concentration of charge carriers to flow into the base and then on to the collector.

4. Why is the current flow in an NPN transistor referred to as "minority carrier current"?

The majority of the current flow in an NPN transistor is actually carried by the positively charged holes in the P-type layer. However, the flow of electrons from the N-type material to the P-type material creates a smaller current flow, hence the term "minority carrier current".

5. What happens to the current flow in an NPN transistor when the base-emitter junction is reverse biased?

When the base-emitter junction is reverse biased, the flow of current from the emitter to the collector is significantly reduced. This is because the reverse bias creates a barrier that prevents the majority of charge carriers (holes in the P-type material) from crossing over to the N-type material. As a result, the transistor acts as an off switch, with very little current flowing from the collector to the emitter.

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