Quantum interference in tunneling electron transport is a phenomenon that occurs when electrons tunnel through a barrier, such as a potential energy barrier, and their wave functions interfere with each other. This interference can lead to constructive or destructive interference, resulting in different probabilities of electron transmission through the barrier.
Quantum interference affects electron transport by altering the probability of electrons passing through a barrier. This can lead to changes in the overall conductivity of a material, as well as the direction and speed of electron flow.
Quantum interference in tunneling electron transport can be observed in a variety of materials, including metals, semiconductors, and insulators. It is also commonly observed in nanostructures, such as quantum dots and nanowires.
Quantum interference in tunneling electron transport is typically studied using scanning tunneling microscopy (STM) or scanning electron microscopy (SEM). These techniques allow scientists to directly observe the interference patterns and measure the conductivity of materials on a nanoscale level.
Quantum interference in tunneling electron transport has potential applications in nanoelectronics, quantum computing, and sensing technologies. It also plays a crucial role in understanding and controlling the properties of materials at the nanoscale.